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RMPA0967(2005) 데이터 시트보기 (PDF) - Fairchild Semiconductor

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RMPA0967 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Absolute Ratings1
Parameter
Symbol
Value
Units
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
5.0
2.6 to 3.5
3.5
+10
-55 to +150
V
V
V
dBm
°C
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Parameter
Symbol Min Typ Max Units Comments
Operating Frequency C
CDMA Operation
Small-Signal Gain
Power Gain
Linear Output Power
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
±885KHz Offset
±1.98MHz Offset
AMPS Operation
Gain
Power-Added Efficiency (analog)
General Characteristics
Input Impedance
Noise Figure
Receive Band Noise Power
Harmonic Suppression3
Spurious Outputs2, 3
Ruggedness w/ Load Mismatch3
Case Operating Temperature
DC Characteristics
Quiescent Current
Reference Current
Shutdown Leakage Current
f
824
849
MHz
SSg
Gp
Po
PAEd
Itot
28
29
27
28
16
39
9
25
480
130
ACPR1
-50
-52
ACPR2
-60
-70
dB
dB
dB
dBm
dBm
%
%
%
mA
mA
dBc
dBc
dBc
dBc
Po = 0dBm
Po = +28dBm; Vmode = 0V
P Po = +16dBm; Vmode 2.0V
Vmode = 0V
P Vmode 2.0V
Vmode = 0V
P Vmode 2.0V
P Vmode 2.0V, Vcc = 1.4V
Po = +28dBm, Vmode = 0V
P Po = +16dBm, Vmode 2.0V
IS-95 A/B Modulation
Po = +28dBm; Vmode = 0V
P Po = +16dBm; Vmode 2.0V
Po = +28dBm; Vmode = 0V
P Po = +16dBm; Vmode 2.0V
Gp
28
PAEa
52
Po = +31dBm
% Po = +31dBm
VSWR
NF
Rx No
2fo-5fo
S
Tc
Iccq
Iref
Icc(off)
2.0:1 2.5:1
4
dB
-137
O dBm/Hz Po +28dBm; 869 to 894MHz
-30
O dBc Po +28dBm
-60
dBc Load VSWR < 5.0:1
10:1
No permanent damage.
-30
85
°C
60
5
8
1
5
P mA Vmode 2.0V
O mA Po +28dBm
µA No applied RF signal.
Notes:
O 1. All parameters met at Tc = +25°C, Vcc = +3.4V, Freq = 836.5MHz, Vref = 2.85V and load VSWR 1.2:1, unless
otherwise noted.
2. All phase angles.
3. Guaranteed by design.
RMPA0967 Rev. E
2
www.fairchildsemi.com

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