RN2101CT 데이터 시트보기 (PDF) - Toshiba

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RN2101CT

Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

Toshiba 

RN2101CT

-100

IC - VI(ON)

RN2101CT ~ RN2106CT

RN2102CT

-100

IC - VI(ON)

-10

Ta=100°C

-1

-0.1

-0.1

25

-25

EMMITER COMMON

VCE= -0.2V

-1

-10

INPUT VOLTAGE VI(ON) ( V)

-100

RN2103CT

-100

IC - VI(ON)

-10

Ta=100°C

-1

-0.1

-0.1

25

-25

EMMITER COMMON

VCE= -0.2V

-1

-10

INPUT VOLTAGE VI(ON) ( V)

-100

RN2104CT

-100

IC - VI(ON)

-10

Ta=100°C

25

-1

-25

-0.1

-0.1

EMMITER COMMON

VCE= -0.2V

-1

-10

INPUT VOLTAGE VI(ON) ( V)

-100

RN2105CT

-100

IC - VI(ON)

Ta=100°C

-10

-1

-0.1

-0.1

25

-25

EMMITER COMMON

VCE= -0.2V

-1

-10

INPUT VOLTAGE VI(ON) ( V)

-100

-10

-1

-0.1

-0.1

Ta=100°C

25

-25

EMMITER COMMON

VCE= -0.2V

-1

-10

INPUT VOLTAGE　VI(ON) ( V)

-100

RN2106CT

-100

IC - VI(ON)

Ta=100°C

-10

-1

-0.1

-0.1

25

-25

EMMITER COMMON

VCE= -0.2V

-1

-10

INPUT VOLTAGE　VI(ON) ( V)

-100

3

2009-04-17

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