RN2101CT 데이터 시트보기 (PDF) - Toshiba

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RN2101CT

Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

Toshiba 

RN2101CT ~ RN2106CT

RN2101CT

-1000

VCE(sat) - IC

EMITTER COMMON

IC / IB=20

Ta=100°C

-100

25

-25

-10

-1

-10

COLLECTOR CURRENT　IC (mA)

-100

RN2103CT

-1000

VCE(sat) - IC

EMITTER COMMON

IC / IB=20

RN2102CT

-1000

VCE(sat) - IC

EMITTER COMMON

IC / IB=20

-100

Ta=100°C

25

-25

-10

-1

-10

COLLECTOR CURRENT IC (mA)

-100

RN2104CT

-1000

VCE(sat) - IC

EMITTER COMMON

IC / IB=20

-100

Ta=100°C

25

-25

-10

-1

-10

COLLECTOR CURRENT　IC (mA)

-100

RN2105CT

-1000

VCE(sat) - IC

EMITTER COMMON

IC / IB=20

-100

Ta=100°C

-10

-1

25

-25

-10

COLLECTOR CURRENT　IC (mA)

-100

RN2106CT

-1000

VCE(sat) - IC

EMITTER COMMON

IC / IB=20

-100

Ta=100°C

25

-25

-10

-1

-10

COLLECTOR CURRENT　IC (mA)

-100

6

-100

Ta=100°C

-10

-1

25

-25

-10

COLLECTOR CURRENT　IC (mA)

-100

2009-04-17

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