2N6796 데이터 시트보기 (PDF) - Intersil
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2N6796 Datasheet PDF : 7 Pages
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Data Sheet
2N6796
November 1998 File Number 1594.2
8A, 100V, 0.180 Ohm, N-Channel Power
MOSFET
The 2N6796 is an N-Channel enhancement mode silicon
gate power field effect transistor designed for applications
such as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate drive
power. This type can be operated directly from integrated
circuits.
Ordering Information
PART NUMBER
PACKAGE
BRAND
2N6796
TO-205AF
2N6796
NOTE: When ordering, use the entire part number.
Features
• 8A, 100V
• rDS(ON) = 0.180Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
SOURCE
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 321-724-7143 | Copyright © Intersil Corporation 1999
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