RSB12W 데이터 시트보기 (PDF) - ROHM Semiconductor

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RSB12W

Low Capacitance Protection Device

ROHM Semiconductor 

Diodes

RSB12W

Low Capacitance Protection Device

RSB12W

zApplication

ESD Protection

zFeatures

1) Ultra small mold type. (EMD3)

2) Low capacitance

3) Bi direction

zConstruction

Silicon Epitaxial Planar

zDimensions (Unit : mm)

1.6±0.2

0.3±0.1

　　　 0.05

(3)

0.15±0.05

zLand size figure (Unit : mm)

1.0

0.5 0.5

0.7

0.2±0.1

(2)

(1)

　　-0.05

0.5 0.5

1.0±0.1

ROHM :

JEDEC : SOT-416

JEITA : SC-75A

dot(year week factory)

0～0.1

0.55±0.1

0.7±0.1

0.6 0.6

EMD3

zStructure

zTaping specifications (Unit : mm)

4.0±0.1

2.0±0.05

φ1.55±0.1

　　　　　 0

0.3±0.1

1.8±0.1

φ0.5±0.1

0.9±0.2

zAbsolute maximum ratings (Ta=25°C)

Parameter

Power dissipation

Junction temperature

Storage temperature

Symbol

Limits

Unit

P

150

mW

Tj

150

℃

Tstg

-55 to +150

℃

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Zener voltage

Reverse current

Capacitance between terminals

VZ

9.6

- 14.4

IR

-

- 0.10

Ct

-

1

-

Unit

Conditions

V

IZ=5mA

µA

VR=9V

pF

f=1MHz,VR=0V

1/2

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