RSM002P03 데이터 시트보기 (PDF) - ROHM Semiconductor
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RSM002P03 Datasheet PDF : 5 Pages
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Transistors
zElectrical characteristics curves
100
Ta=25°C
f=1MHz
VGS=0V
Ciss
10
1000
tf
100
td(off)
Ta=25°C
VDD= −15V
VGS= −10V
RG=10Ω
Pulsed
Crss
Coss
1
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
td(on)
tr
1
0.01
0.1
1
DRAIN CURRENT : −ID (A)
Fig.2 Switching Characteristics
RSM002P03
8
Ta=25°C
7
VDD= −15V
ID=−250mA
RG=10Ω
6 Pulsed
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
1
Ta=125°C
0.1
75°C
25°C
−25°C
0.01
VDS= −10V
20
Pulsed
15
10
5
ID= −125mA
ID= −250mA
Ta=25°C
Pulsed
1
Ta=125°C
75°C
25°C
0.1
−25°C
VGS=0V
Pulsed
0.001
1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.4 Typical Transfer Characteristics
0
0 1 2 3 4 5 6 7 8 9 10
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
10
Ta=125°C
75°C
25°C
−25°C
1
VGS= −10V
Pulsed
10
Ta=125°C
75°C
25°C
−25°C
1
VGS= −4.5V
Pulsed
10
Ta=125°C
75°C
25°C
−25°C
1
VGS= −4V
Pulsed
0.1
0.01
0.1
1
DRAIN CURRENT : −ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
0.1
0.01
0.1
1
DRAIN CURRENT : −ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
0.1
0.01
0.1
1
DRAIN CURRENT : −ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
Rev.A
3/4
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