RT8009 데이터 시트보기 (PDF) - Richtek Technology
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RT8009 Datasheet PDF : 13 Pages
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RT8009
Parameter
Symbol
Test Conditions
M in
Output Voltage
Accuracy
FB Input Current
A dj ust abl e
ΔVOUT
IFB
VIN = VOUT + ΔV to 5.5V
0A < IOUT < 600mA
VFB = VIN
(Note 5) −3
−5 0
VIN = 3.6V
--
RDS(ON) of P-Channel MOSFET RDS(ON)_P IOUT = 200mA
VIN = 2.5V
--
VIN = 3.6V
--
RDS(ON) of N-Channel MOSFET RDS(ON)_N IOUT = 200mA
VIN = 2.5V
--
P-Channel Current Limit
ILIM_P
VIN = 2.5V to 5.5 V
1
EN High-Level Input Voltage
VEN_H
VIN = 2.5V to 5.5V
1.5
EN Low-Level Input Voltage
VEN_L
VIN = 2.5V to 5.5V
--
Undervoltage Lock Out threshold
--
Hy ste re si s
--
Oscillator Frequency
fOSC
VIN = 3.6V, IOUT = 100mA
0.8
Thermal Shutdown Temperature TSD
--
Min. On Time
--
Max. Duty Cycle
10 0
LX Leakage Current
VIN = 3.6V, VLX = 0V or VLX = 3.6V
-1
Typ
--
--
0 .3
0 .4
0. 25
0. 35
--
--
--
1 .8
0 .1
1. 25
160
50
--
--
Max Units
+3 %
50 nA
0.65
Ω
0.80
0.55
Ω
0.65
1.8 A
--
V
0.4 V
--
V
--
V
1.85 MHz
--
°C
--
ns
--
%
1 μA
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. Devices are ESD sensitive. Handling precaution recommended.
Note 3. The device is not guaranteed to function outside its operating conditions.
Note 4. θJA is measured in the natural convection at TA = 25°C on a low effective thermal conductivity test board of
JEDEC 51-3 thermal measurement standard.
Note 5. ΔV = IOUT x RDS(ON)_P
DS8009-03 March 2007
www.richtek.com
5
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