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RT8020APQW 데이터 시트보기 (PDF) - Richtek Technology

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RT8020APQW Datasheet PDF : 14 Pages
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RT8020
Parameter
Symbol
Test Conditions
Min
Output Voltage
Accuracy
Adjustable VOUT
VIN = VOUT + V to 5.5V
0A < IOUT < 1A
(Note 5) 3
FB Input Current
IFB
VFB = VIN
50
RDS(ON) of P-MOSFET
VIN = 2.5V
--
RDS(ON)_P IOUT = 200mA
VIN = 3.6V
--
RDS(ON) of N-MOSFET
VIN = 2.5V
--
RDS(ON)_N IOUT = 200mA
VIN = 3.6V
--
P-Channel Current Limit
ILIM_P
VIN = 2.5V to 5.5 V
1.4
EN High-Level Input Voltage
VEN_H
VIN = 2.5V to 5.5V
1.5
EN Low-Level Input Voltage
VEN_L
VIN = 2.5V to 5.5V
--
Oscillator Frequency
fOSC
VIN = 3.6V, IOUT = 100mA
1.2
Thermal Shutdown Temperature TSD
--
Maximum Duty Cycle
100
LX Leakage Current
ILX
VIN = 3.6V, VLX = 0V or VLX = 3.6V 1
Typ
--
--
0.38
0.28
0.35
0.25
1.5
--
--
1.5
160
--
--
Max Units
+3 %
50 nA
--
--
--
--
2
A
VIN
V
0.4
1.8 MHz
-- °C
--
%
1 µA
Note 1. Stresses listed as the above Absolute Maximum Ratingsmay cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. Devices are ESD sensitive. Handling precaution recommended.
Note 3. The device is not guaranteed to function outside its operating conditions.
Note 4. θJA is measured in the natural convection at TA = 25°C on a high effective four layers thermal conductivity test board of
JEDEC 51-7 thermal measurement standard.
Note 5. V = IOUT x PRDS(ON)
Note 6. Guarantee by design.
DS8020-03 August 2007
www.richtek.com
5

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