TDA1908 데이터 시트보기 (PDF) - STMicroelectronics
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TDA1908 Datasheet PDF : 12 Pages
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TEST CIRCUIT
TDA1908
* See fig. 12
THERMAL DATA
Symbol
Parameter
Rth j-tab
Rth j-amb
Thermal resistance junction-tab
Thermal resistance junction-ambient
(°) Obtained with tabs soltered to printed circuit board with min copper area.
Value
Unit
max
12
°C/W
max
(°) 70
°C/W
ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Tamb = 25 °C, Rth (heatsink)= 8 °C/W, unless
otherwise specified)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Vs Supply voltage
Vo Quiescent output voltage
Id
Quiescent drain current
Vs = 4V
Vs = 18V
Vs = 30V
Vs = 4V
Vs = 18V
Vs = 30V
4
30
V
1.6
2.1
2.5
8.2
9.2 10.2
V
14.4 15.5 16.8
15
17.5
mA
21
35
VCEsat Output stage saturation voltage
(each output transistor)
IC = 1A
IC = 2.5A
0.5
V
1.3
Po Output power
d = 10%
f = 1KHz
Vs = 9V RL = 4Ω
2.5
Vs = 14V RL = 4Ω
Vs = 18V RL = 4Ω
5.5
7
9
W
Vs = 22V RL = 8Ω
6.5
8
Vs = 24V RL = 16Ω
4.5
5.3
3/12
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