S1A0426C01 데이터 시트보기 (PDF) - Samsung
부품명
상세내역
제조사
S1A0426C01 Datasheet PDF : 4 Pages
| |||
AM/FM 1 CHIP RADIO
S1A0426C01
ELECTRICAL CHARACTERISTICS
(VCC = 6V, Ta = 25°C, FM; ∆f = 22.5kHz, fm = 1kHz, AM; 30% Mod, unless otherwise specified)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Quiescent Circuit Current
ICCQ VI = 0
− 7.0 14.0 mA
F/E Voltage Gain
GV1V VI(1) = 40dBµ, fc = 100MHz, ∆f = 0
32 39 46 dB
Detect Output Gain
FM
IF-3 dB Sensitivity
VO(1) VI(3) = 90dBµ, fi = 10.7MHz
VI (LIM) Vo(VI3) = 90dBµ, -3dB, fi = 10.7MHz
−26 −20 −14 dBm
− 24 32 dBµ
Total Harmonic Distortion THD1 VI(3) = 90dBµ, fi = 10.7MHz(∆f = 75kHz) − 0.3 2.0 %
Meter Drive Current
IM (1) VI(3) = 60dBµ, fi = 10.7MHz
1.8 3.5 7.0 mA
Quiescent Circuit Current ICCQ(2) VI = 0
− 3.5 10.0 mA
F/E Voltage Gain
GV(2) VI(2) = 60dBµ, fc = 1660kHz, m=0%
15 22 29 dB
IF Voltage Gain
AM
AM Detect Output Voltage
GV(3) Vo(3) = -34dBm, fi = 455kHz
VO(2) VI(3) = 85dBµ, fi = 455kHz
14 20 27 dBµ
−26 −20 −14 dBm
Total Harmonic Distortion THD2 VI(2) = 95dBµ, fc= 1660kHz, Vcc = 7.8V − 0.6 2.0 %
Meter Drive Current
IM(2) VI(3) = 85dBµ, fi = 455kHz
1.3 3.0 7.0 mA
Closed Loop Voltage Gain GV(4) Vo(4) = 0dBm, f = 1kHz
27 31.5 36 dB
AF Total Harmonic Distortion THD3 Po = 50mW, f = 1kHz
− 0.3 2.5 %
Output Power
PO RL = 8Ω, THD = 10%, f = 1kHz
0.4 0.5 − W
3
Share Link: 