S1A0426C02 데이터 시트보기 (PDF) - Samsung
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S1A0426C02 Datasheet PDF : 4 Pages
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AM/FM 1 CHIP RADIO
S1A0426C02
ELECTRICAL CHARACTERISTICS
(VCC = 6 V, Ta = 25 °C, FM; ∆f = 22.5 kHz, fm = 1 kHz, AM; 30% Mod, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min. Typ. Max. Unit
Quiescent Circuit Current
F/E Voltage Gain
Detect Output Gain
FM IF-3 dB Sensitivity
Total Harmonic Distortion
ICCQ(1)
GV(1)
VO(1)
VI (LIM)
THD1
VI = 0
VI(1) = 40dBµ, fc = 100MHz, ∆f = 0
VI(3) = 90dBµ, fi = 10.7MHz
Vo(VI3) = 90dBµ, −3dB, fi = 10.7MHz
VI(3) = 90dBµ, fi = 10.7MHz
(∆f = 75kHz)
− 7.0 14.0 mA
32 39 46 dBµ
−26 −20 −14 dBm
− 24 32 dB
− 0.3 2.0 %
Meter Drive Current
IM (1) VI(3) = 60dBµ , fi = 10.7MHz
1.8 3.5 7.0 mA
Quiescent Circuit Current ICCQ(2) VI = 0
− 3.5 10.0 mA
F/E Voltage Gain
GV(2) VI(2) = 60dBµ, fc = 1660kHz, m = 0%
15 22 29 dB
IF Voltage Gain
AM
AM Detect Output Voltage
GV(3)
VO(2)
Vo(3) = −34dBm, fi = 455kHz
VI(3) = 85dBµ, fi = 455kHz
14 20 27 dBµ
−26 −20 −14 dBm
Total Harmonic Distortion THD2 VI(2) = 95dBµ, fc = 1660kHz, Vcc = 7.8V − 0.6 2.0 %
Meter Drive Current
IM(2) VI(3) = 85dBµ, fi = 455kHz
1.3 3.0 7.0 mA
Closed Loop Voltage Gain GV(4) Vo(4) = 0dBm, f = 1kHz
27 31.5 36 dB
Total Harmonic Distortion
AF Output Power
THD3
PO
Po = 50mW, f = 1kHz
RL = 8Ω, THD = 10%, f = 1kHz
− 0.3 2.5 %
0.4 0.5 − W
Mute Level
Po = mW, Vi(4) = 30dBm
ML 1kHz, V1(3) = FF
8 15 22 dB
3
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