S21MD4V 데이터 시트보기 (PDF) - Sharp Electronics
부품명
상세내역
제조사
S21MD4V Datasheet PDF : 4 Pages
| |||
S21MD4V
S21MD4V
Built-in Zero-cross Circuit, High Noise
Resistance Type Phototriac Coupler
.. g Lead forming type of S21MD4V is also available. (S21MD4W )
gg TUV ( DIN-VDE0884 ) approved type is also available as an option.
s Features
s Outline Dimensions
( Unit : mm)
1. Built-in zero-cross circuit
2. High critical rate of rise of OFF-state volt-
age ( dV/dt : MIN. 100V/ µs )
3. High repetitive peak OFF-state voltage
( VDRM : MIN. 600V )
4. Isolation voltage between input and output
Viso : 5 000Vrms
5. UL recognized, file No. E64380 ( S21MD4V/ S21MD4W)
g S21MD4V is for 200V line
s Applications
1. For triggering medium/high power triac
2.54± 0.25
654
Internal connection
diagram
6 54
S21MD4V
Zero-cross
circuit
123
Anode
mark
0.9± 0.2
1.2± 0.3
7.12±0.5
1 23
7.62± 0.3
1 Anode
2 Cathode
3 NC
4 Anode/
Cathode
5 No external
connection
6 Anode/
Cathode
0.5±0.1
0.26± 0.1
θ : 0 to 13 ˚ θ
s Absolute Maximum Ratings
Parameter
Input
Output
Forward current
Reverse voltage
RMS ON-state current
∗1Peak one cycle surge current
Repetitive peak OFF-state voltage
∗2Isolation voltage
Operating temperature
Storage temperature
∗3Soldering temperature
∗1 Sine wave
∗2 40 to 60% RH, AC for 1 minute, f = 60HZ
∗3 For 10 seconds
Symbol
IF
VR
IT
I surge
V DRM
Viso
T opr
T stg
T sol
( Ta = 25˚C)
Rating
50
6
100
1.2
600
5 000
- 30 to + 100
- 55 to + 125
260
Unit
mA
V
mA rms
A
V
Vrms
˚C
˚C
˚C
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
Share Link: 