S3C7335 데이터 시트보기 (PDF) - Samsung

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S3C7335

The S3C7335 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47

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ELECTRICAL DATA

S3C7335/P7335

(TA = 25 °C, VDD = 0 V )

Table 17-5. Input/Output Capacitance

Parameter

Symbol

Condition

Min

Typ

Input

capacitance

CIN

fCLK = 1 MHz; Unmeasured

–

–

pins are returned to VSS

Output

capacitance

COUT

–

–

I/O capacitance

CIO

–

–

Max

Units

15

pF

15

pF

15

pF

Table 17-6. A.C. Electrical Characteristics

(TA = – 40 °C to + 85 °C, VDD = 1.8 V to 5.5 V)

Parameter

Symbol

Conditions

Min

Typ

Instruction cycle

tCY

VDD = 2.7 V to 5.5 V

0.67

–

time (1)

VDD = 1.8 V to 5.5 V

1.3

Interrupt input

tINTH, tINTL INT0

(2)

–

high, low width

INT1, INT2, INT4, KS0–KS2

10

RESET and CE

Input Low Width

tRSL

Input

10

1

Max

Units

64

µs

64

–

µs

–

µs

NOTES:

1. Unless otherwise specified, Instruction Cycle Time condition values assume a main system clock/4 (fx/4) source.

2. Minimum value for INT0 is based on a clock of 2tCY or 128/fxx as assigned by the IMOD0 register setting.

Table 17-6. A.C. Electrical Characteristics (Continued)

(TA = – 10 °C to + 70 °C, VDD = 3.5 V to 5.5 V)

Parameter

A/D converting

Resolution

Absolute accuracy

AD conversion

time

Analog input

voltage

Analog input

impedance

Symbol

–

–

tCON

VIAN

RAN

Conditions

–

–

–

–

VDD = 5 V

Min

Typ

–

8

–

–

17

34/fxx (note)

VSS

–

2

1000

NOTE: fxx stands for the system clock (fx or fxt).

Max

–

±2

–

VDD

–

Units

bits

LSB

µs

V

MΩ

17-8

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