SEMB9(2004) 데이터 시트보기 (PDF) - Infineon Technologies

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SEMB9
(Rev.:2004)

PNP Silicon Digital Transistor

Infineon Technologies 

BCR185.../SEMB9

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO 50

-

-V

IC = 100 µA, IB = 0

Collector-base breakdown voltage

V(BR)CBO 50

-

-

IC = 10 µA, IE = 0

Collector-base cutoff current

I CBO

-

- 100 nA

VCB = 40 V, IE = 0

Emitter-base cutoff current

I EBO

-

- 167 µA

VEB = 6 V, IC = 0

DC current gain1)

hFE

70

-

--

IC = 5 mA, VCE = 5 V

Collector-emitter saturation voltage1)

VCEsat

-

-

0,3 V

IC = 10 mA, IB = 0,5 mA

Input off voltage

Vi(off)

0,5

-

1

IC = 100 µA, VCE = 5 V

Input on voltage

Vi(on)

0,5

-

1,4

IC = 2 mA, VCE = 0,3 V

Input resistor

R1

7

10 13 kΩ

Resistor ratio

R1/R 2

0,19 0,21 0,24 -

AC Characteristics

Transition frequency

IC = 10 mA, VCE = 5 V, f = 100 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

fT

-

200

- MHz

Ccb

-

3

- pF

1Pulse test: t < 300µs; D < 2%

3

Jun-14-2004

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