IXFN25N90 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXFN25N90 Datasheet PDF : 4 Pages
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Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • IDSS, Note 1
18
28
S
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
8.7 10.8 nF
800 1000 pF
300
375 pF
td(on)
Resistive Switching Times
60
ns
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
35
ns
td(off)
RG = 1Ω (External)
130
ns
tf
24
ns
Qg(on)
240
nC
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
56
nC
Qgd
107
nC
RthJC
RthCS
0.21 °C/W
0.05
°C/W
IXFN25N90
IXFN26N90
SOT-227B Outline
Source-Drain Diode
TJ = 25°C unless otherwise specified)
IS
VGS = 0V
Characteristic Values
Min. Typ.
Max.
25N90
26N90
25 A
26 A
ISM
Repetitive, pulse width limited by TJM 25N90
26N90
100 A
104 A
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = IS, -di/dt = 100A/μs
QRM
IRM
VR = 100V
1.5 V
250 ns
1.4
μC
10
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
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