SFP9624 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SFP9624 Datasheet PDF : 7 Pages
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SFP9624
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-250 -- -- V
-- -0.22 -- V/oC
-2.0 -- -4.0 V
-- -- -100 nA
-- -- 100
-- -- -10
-- -- -100 µA
-- -- 2.4 Ω
-- 2.0 -- Ω
-- 415 540
-- 65 95 pF
-- 24 35
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-30V
VGS=30V
VDS=-250V
VDS=-200V,TC=125oC
VGS=-10V,ID=-1.4A
O4
VDS=-40V,ID=-1.4A
O4
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 11 30
-- 19 50
VDD=-125V,ID=-2.7A,
-- 34 80 ns RG=18Ω
-- 15 40
See Fig 13
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller “) Charge
-- 16 20
VDS=-200V,VGS=-10V,
-- 3.3 -- nC ID=-2.7A
-- 7.8 --
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -2.7
Integral reverse pn-diode
A
-- -11
in the MOSFET
O4 -- -- -5.0 V TJ=25oC,IS=-2.7A,VGS=0V
-- 140 -- ns TJ=25oC,IF=-2.7A
-- 0.7 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=40mH, IAS=-2.7A, VDD=-50V, RG=27Ω*, Starting TJ =25oC
O3 ISD<_-2.7A, di/dt<_300A/µs, VDD_<BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_ 2%
O5 Essentially Independent of Operating Temperature
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