SFT10000 데이터 시트보기 (PDF) - Solid State Devices, Inc.
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SFT10000 Datasheet PDF : 2 Pages
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT10000/3
Electrical Characteristics
Collector – Emitter Sustaining Voltage
(IC = 250 mA, IB = 0, VCLAMP = Rated VCEO)
Collector – Emitter Sustaining Voltage
(VCLAMP = Rated VCEX, TC = 100ºC)
IC = 2A
IC = 10A
Collector Cutoff Current
(VCE = Rated Value, VBE(off) = 1.5V)
TC = 25ºC
TC = 100ºC
Collector Cutoff Current
(VCEV = Rated VCEV, RBE = 50Ω, TC = 100ºC )
Emitter Cutoff Current
(VEB = 8V, IC = 0)
DC Current Gain*
(VCE = 5V)
IC = 5A
IC = 10A
Collector-Emitter Saturation Voltage*
IC = 10A, IB = 400mA, TC = 25ºC
IC = 20A, IB = 1A, TC = 25ºC
IC = 10A, IB = 400mA, TC = 100ºC
Base-Emitter Saturation Voltage*
(IC = 10A, IB = 400mA)
TC = 25ºC
TC = 100ºC
Diode Forward Voltage
(IF = 10A)
Small Signal Current Gain
(IC = 1A, VCE = 10V, f = 1MHz)
Output Capacitance
(VCB = 30V, IE = 0A, f = 2.0MHz)
Delay Time
Rise Time
Storage Time
VCC = 250V, IC = 10A, IB1 = IB2 = 400 mA, VBE (off) = 5V,
tp = 50s, Duty Cycle ≤ 2%
Fall Time
Storage Time
Crossover Time
IC = 10A(pk), VCLAMP = Rated VCEX,
IB1 = 400 mA, VBE (off) = 5V, TC = 100ºC
Symbol
VCEO(sus)
VCEX(sus)
ICBO
ICEV
IEBO
HFE
VCE (SAT)
VBE (SAT)
VF
HFE
Cob
t(on)
td
tr
t(off)
ts
tf
tsv
tc
Min Max
80
––
400 ––
275 ––
–– 0.25
––
5.0
––
5
–– 150
50 600
40 400
––
1.9
––
3.0
––
2.0
––
2.5
––
2.5
––
5.0
10
––
100 325
––
0.2
––
0.6
––
3.5
––
2.4
––
5.5
––
3.7
Units
Volts
Volts
mA
mA
mA
Volts
Volts
Volts
pF
µs
µs
μs
µs
µs
µs
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
CASE OUTLINE: TO-3
Pin Out:
Case – Collector
1 – Base
2 – Emitter
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0011B
DOC
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