SGH20N120RUFD 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SGH20N120RUFD Datasheet PDF : 8 Pages
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Common Emitter
V = ± 15V, R = 15Ω
GE
G
T = 25℃
Eoff
C
T = 125℃
C
Eon
Eoff
1000
10
15
20
25
30
35
40
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
16
Common Emitter
14
R = 30Ω
L
T = 25℃
C
12
600V
10
8
V = 200V
6
CC
400V
4
2
0
0
20
40
60
80
100
Gate Charge, Q [nC]
g
Fig 14. Gate Charge Characteristics
100
I MAX. (Pulsed)
C
I MAX. (Continuous)
10 C
50µs
100µs
1ms
DC Operation
1
Single Nonrepetitive
0.1 Pulse T = 25℃
C
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector - Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
100
10
Safe Operating Area
V = 20V, T = 100℃
GE
C
1
1
10
100
1000
Collector - Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA
10
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
1E-3
10-5
single pulse
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100
101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGH20N120RUFD Rev. B2
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