SGH25N120 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SGH25N120 Datasheet PDF : 7 Pages
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 1mA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 25mA, VCE = VGE
IC = 25A, VGE = 15V
IC = 40A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
Le
Internal Emitter Inductance
VCC = 600 V, IC = 25A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 25A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 600 V, VGE = 15V
@ TC = 100°C
VCE = 600 V, IC = 25A,
VGE = 15V
Measured 5mm from PKG
1200
--
--
--
--
--
V
0.6
--
V/°C
--
1
mA
-- ± 100 nA
3.5
5.5
7.5
V
--
2.3 2.7
V
--
2.8
--
V
-- 2400 --
pF
--
220
--
pF
--
70
--
pF
--
30
--
ns
--
60
--
ns
--
70 130
ns
--
150 200
ns
--
1.60
--
mJ
--
1.63
--
mJ
--
3.23 4.55 mJ
--
30
--
ns
--
70
--
ns
--
90 165
ns
--
200 270
ns
--
1.88
--
mJ
--
2.50
--
mJ
--
4.35 6.31 mJ
10
--
--
µs
--
110 165 nC
--
18
27
nC
--
55
83
nC
--
14
--
nH
©2001 Fairchild Semiconductor Corporation
SGH25N120RUF Rev. A1
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