SGH25N120 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
SGH25N120 Datasheet PDF : 7 Pages
| |||
4000
3500
3000
2500
2000
1500
1000
500
0
1
Cies
Common Emitter
V =0V, f = 1MHz
GE
T = 25℃
C
Coes
Cres
10
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
Common Emitter
VCC = 600V, VGE = ± 15V
I = 25A
C
TC = 25℃
TC = 125℃
100
td(off)
tf
tf
10
100
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
100
Common Emitter
VGE = ± 15V, RG = 10Ω
TC = 25℃
T = 125℃
C
tr
td(on)
10
10
20
30
40
50
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
Common Emitter
V = 600V, V = ± 15V
CC
GE
I = 25A
C
TC = 25℃
TC = 125℃
100
tr
td(on)
10
10
100
Gate Resistance, RG [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
V = 600V, V = ± 15V
CC
GE
I = 25A
C
TC = 25℃
TC = 125℃
Eon
Eoff
Eoff
1000
10
100
Gate Resistance, RG [Ω]
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
V = ± 15V, R = 10Ω
GE
G
TC = 25℃
T = 125℃
C
tf
100
td(off)
10
20
30
40
50
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH25N120RUF Rev. A1
Share Link: 