SGH30N60RUFD 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SGH30N60RUFD Datasheet PDF : 8 Pages
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 30mA, VCE = VGE
IC = 30A, VGE = 15V
IC = 48A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
Le
Internal Emitter Inductance
VCC = 300 V, IC = 30A,
RG = 7Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 30A,
RG = 7Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC = 30A,
VGE = 15V
Measured 5mm from PKG
600
--
--
V
--
0.6
--
V/°C
--
--
250
uA
--
-- ± 100 nA
5.0
6.0
8.5
V
--
2.2 2.8
V
--
2.5
--
V
-- 1970 --
pF
--
310
--
pF
--
74
--
pF
--
30
--
ns
--
65
--
ns
--
54
80
ns
--
138 200
ns
--
919
--
uJ
--
814
--
uJ
-- 1733 2430 uJ
--
34
--
ns
--
67
--
ns
--
60
90
ns
--
281 400
ns
--
921
--
uJ
-- 1556 --
uJ
-- 2477 3470 uJ
10
--
--
us
--
85 120 nC
--
17
25
nC
--
39
55
nC
--
14
--
nH
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
Test Conditions
IF = 25A
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
IF= 25A,
di/dt = 200 A/us
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
50
105
4.5
8.5
112
420
Max.
1.7
--
95
--
10
--
375
--
Units
V
ns
A
nC
©2002 Fairchild Semiconductor Corporation
SGH30N60RUFD Rev. B1
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