SGH40N60 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SGH40N60 Datasheet PDF : 7 Pages
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2500
2000
1500
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
1000
500
Coes
Cres
0
1
10
30
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 20A
TC = 25℃
Toff
TC = 125℃
Tf
100
Tf
20
1
10
Gate Resistance, RG [Ω]
100 200
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
200
100
Ton
Tr
10
10
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 10Ω
TC = 25℃
TC = 125℃
15
20
25
30
35
40
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
300
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 20A
TC = 25℃
TC = 125℃
100
Ton
Tr
10
1
10
Gate Resistance, RG [Ω]
100 200
Fig 8. Turn-On Characteristics vs.
Gate Resistance
2000
Common Emitter
1000
VCC = 300V, VGE = ± 15V
IC = 20A
TC = 25℃
TC = 125℃
Eon
Eoff
Eon
Eoff
100
50
1
10
Gate Resistance, RG [Ω]
100 200
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 10Ω
TC = 25℃
TC = 125℃
Toff
Tf
Toff
100
Tf
20
10
15
20
25
30
35
40
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2009 Fairchild Semiconductor Corporation
4
SGH40N60UF Rev. C0
www.fairchildsemi.com
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