SI3451DV(2007) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI3451DV Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless noted
4
2.0
Si3451DV
Vishay Siliconix
3
1.5
2
1.0
1
0.5
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating*
0.0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Foot
*The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73701
S-71597-Rev. B, 30-Jul-07
www.vishay.com
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