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SI4012 데이터 시트보기 (PDF) - Silicon Laboratories

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SI4012
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Silicon Laboratories Silabs
SI4012 Datasheet PDF : 50 Pages
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Si4012
Table 4. Low Battery Detector Characteristics*
(TA = 25° C, VDD = 3.3 V, RL = 550 , unless otherwise noted)
Parameter
Battery Voltage Measurement Accuracy
Test Condition
Min
Typ
2
Max Unit
%
*Note: All specifications guaranteed by production test unless otherwise noted. Production test conditions and max limits are
listed in "1.1. Definition of Test Conditions" on page 7.
Table 5. Optional Crystal Oscillator Characteristics*
(TA = 25° C, VDD = 3.3 V, RL = 600 , unless otherwise noted)
Parameter
Test Condition
Min
Typ
Max Unit
Crystal Frequency Range
10
13
MHz
Input Capacitance (GPIO0)
GPIO0 configured as a crystal oscillator; —
3
XO_LOWCAP=1
pF
GPIO0 configured as a crystal oscillator; —
5.5
XO_LOWCAP=0
pF
Crystal ESR
GPIO0 configured as a crystal oscillator; —
XO_LOWCAP=1
120
GPIO0 configured as a crystal oscillator; —
XO_LOWCAP=0
80
Start-Up Time
Crystal oscillator only,
60 mH motional arm inductance
9
50
ms
*Note: All specifications guaranteed by production test unless otherwise noted. Production test conditions and max limits are
listed in "1.1. Definition of Test Conditions" on page 7.
Table 6. Thermal Conditions
Parameter
Ambient Temperature
Junction Temperature
Storage Temperature
Symbol
TA
TOP
TSTG
Value
–40 to 85
–40 to 90
–55 to 125
Unit
C
C
C
Table 7. Absolute Maximum Ratings1,2
Parameter
Symbol
Value
Unit
Supply Voltage
Input Current3
Input Voltage4
VDD
–0.5 to 3.9
V
IIN
10
mA
VIN
–0.3 to (VDD + 0.3)
V
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended
operating conditions for extended periods may affect device reliability.
2. Handling and assembly of these devices should only be done at ESD-protected workstations.
3. All input pins besides VDD.
4. For GPIO pins configured as inputs.
6
Rev 1.1

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