SI4100DY 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI4100DY Datasheet PDF : 10 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
VGS = 10 V thru 7 V
6V
16
16
Si4100DY
Vishay Siliconix
12
12
8
4
0
0
0.20
5V
4V
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.16
0.12
0.08
0.04
VGS = 6 V
VGS = 10 V
0.00
0
4
8
12
16
20
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 4.4 A
8
VDS = 50 V
6
VDS = 80 V
4
2
0
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
Gate Charge
8
4
0
0
1000
TC = 125 °C
25 °C
- 55 °C
1
2
3
4
5
6
7
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
800
Ciss
600
400
200
Coss
Crss
0
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
Capacitance
2.2
2.0
VGS = 6 V, 10 V
ID = 4.4 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69251
S09-0220-Rev. B, 09-Feb-09
www.vishay.com
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