SI4108DY 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI4108DY Datasheet PDF : 10 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
10
48
VGS = 10 thru 6 V
8
Si4108DY
Vishay Siliconix
36
6
24
12
0
0
0.00860
VGS = 5 V
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4
2
0
0
3000
TC = 125 °C
TC = 25 °C
TC = - 55 °C
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.00845
0.00830
0.00815
VGS = 10 V
0.00800
0
15
30
45
60
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 13.8 A
8
VDS = 38 V
6
VDS = 60 V
4
2400
Ciss
1800
1200
600
Coss
0 Crss
0
15
30
45
60
75
VDS - Drain-to-SourceVoltage(V)
Capacitance
2.1
ID = 13.8 A
1.8
VGS = 10 V
1.5
1.2
2
0.9
0
0
10
20
30
40
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68635
S-81195-Rev. A, 26-May-08
www.vishay.com
3
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