SI4500BDY-E3 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI4500BDY-E3 Datasheet PDF : 8 Pages
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Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
VGS = 5 thru 3 V
2.5 V
25
25
N−CHANNEL
Transfer Characteristics
20
20
15
2V
10
5
0
0
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
1.5 V
1
2
3
4
5
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 2.5 V
VGS = 4.5 V
5
10
15
20
25
30
ID − Drain Current (A)
Gate Charge
5
VDS = 10 V
4
ID = 9.1 A
15
10
TC = 125_C
5
25_C
−55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS − Gate-to-Source Voltage (V)
1600
Capacitance
1400
Ciss
1200
1000
800
600
Coss
400
200
0
0
Crss
4
8
12
16
20
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
1.4
ID = 9.1 A
3
1.2
2
1.0
1
0.8
0
0
2
4
6
8
10
12
Qg − Total Gate Charge (nC)
0.6
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
www.vishay.com
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