SI4500BDY 데이터 시트보기 (PDF) - Vishay Semiconductors

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SI4500BDY

Complementary MOSFET Half-Bridge (N- and P-Channel)

Vishay Semiconductors 

Si4500BDY

Vishay Siliconix

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

30

0.08

TJ = 150 °C

10

0.07

ID = 9.1 A

0.06

0.05

ID = 3.3 A

0.04

0.03

TJ = 25 °C

0.02

0.01

0

0

0.3

0.6

0.9

1.2

1.5

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.00

0

1

2

3

4

5

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

0.4

80

ID = 250 µA

70

0.2

60

0.0

- 0.2

- 0.4

- 0.6

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

50

40

30

20

10

0

0.001 0.01

0.1

1

10

Time (s)

Single Pulse Power

100 600

100

Limited by R(DS)on*

10

IDM Limited

P(t) = 0.0001

P(t) = 0.001

1

ID(on)

Limited

0.1

TA = 25 °C

Single Pulse

P(t) = 0.01

P(t) = 0.1

P(t) = 1

P(t) = 10

DC

0.01

0.1

BVDSS Limited

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

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4

Document Number: 72281

S09-0705-Rev. D, 27-Apr-09

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