SI4500BDY 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI4500BDY Datasheet PDF : 9 Pages
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Si4500BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
VGS = 5 V thru 3.5 V
3V
16
16
12
12
2.5 V
8
8
TC = - 55 °C
25 °C
125 °C
4
0
0
0.20
2V
1.5 V
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.16
0.12
VGS = 2.5 V
0.08
0.04
VGS = 4.5 V
0.00
0
4
8
12
16
20
ID - Drain Current (A)
On-Resistance vs. Drain Current
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
800
700
Ciss
600
500
400
300
Coss
200
100 Crss
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
5
VDS = 10 V
ID = 5.3 A
4
1.6
VGS = 4.5 V
ID = 5.3 A
1.4
3
1.2
2
1.0
1
0.8
0
012345678
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
6
Document Number: 72281
S09-0705-Rev. D, 27-Apr-09
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