SI4684DY(2005) 데이터 시트보기 (PDF) - Vishay Semiconductors
부품명
상세내역
제조사
SI4684DY Datasheet PDF : 3 Pages
| |||
SPICE Device Model Si4684DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Ciss
Coss
Crss
Qg
VDS = VGS, ID = 250 µA
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 9.5 A
VDS = 15 V, ID = 12 A
IS = 2.3 A
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 11 A
Gate-Source Charge
Gate-Drain Charge
Qgs
VDS = 15 V, VGS = 4.5 V, ID = 11 A
Qgd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
Simulated Measured
Data
Data
Unit
0.82
V
598
A
0.0078
0.0078
Ω
0.0094
0.0092
34
45
S
0.82
0.70
V
2111
2080
348
340
pF
99
135
30
30
14
14
nC
3
3
2.8
2.8
www.vishay.com
2
Document Number: 73360
S-50586Rev. A, 04-Apr-05
Share Link: 