SI4874BDY(2009) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI4874BDY Datasheet PDF : 8 Pages
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Si4874BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
200
0.2
ID = 250 µA
160
0.0
120
- 0.2
- 0.4
80
- 0.6
40
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power
2
1
Duty Cycle = 0.5
100
Limited by RDS(on)*
1 ms
10
1
0.1
TC = 25 °C
Single Pulse
10 ms
100 ms
1s
10 s
DC
0.01
0.1
* VGS
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 67 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10- 3
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 73058
S09-0540-Rev. C, 06-Apr-09
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