SI9424 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SI9424 Datasheet PDF : 5 Pages
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Typical Characteristics (continued)
5
ID= -8.0A
4
3
VDS= -5V
-10V
-15V
2
1
0
0
5
10
15
20
25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
10ms
100ms
1s
10s
DC
0.1
0.01
VGS= -4.5V
SINGLE PULSE
RθJA= 125oC/W
TA= 25oC
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
3500
3000
2500
2000
1500
1000
500
0
0
f= 1 MHz
VGS= 0V
Ciss
Coss
Crss
4
8
12
16
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA=125oC/W
TA=25oC
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA = 125°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
Si9424DY Rev.A
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