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SIP32452DB-T2-GE1(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors

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SIP32452DB-T2-GE1
(Rev.:2011)
Vishay
Vishay Semiconductors Vishay
SIP32452DB-T2-GE1 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
SiP32452, SiP32453
Vishay Siliconix
SPECIFICATIONS
Parameter
Operating Voltagec
Quiescent Current
Off Supply Current
Off Switch Current
Reverse Blocking Current
On-Resistance
On-Resistance Temp.-Coefficient
EN Input Low Voltagec
EN Input High Voltagec
EN Input Leakage
Output Turn-On Delay Time
Output Turn-On Rise Time
Output Turn-Off Delay Time
Symbol
VIN
IQ
IQ(off)
IDS(off)
IRB
RDS(on)
TCRDS
VIL
VIH
IEN
td(on)
tr
td(off)
Test Conditions Unless Specified
VIN = 1 V, TA = - 40 °C to 85 °C
(Typical values are at TA = 25 °C)
VIN = 1.2 V, VEN = VIN, OUT = open
VIN = 2.5 V, VEN = VIN, OUT = open
EN = GND, OUT = open
EN = GND, OUT = 0 V
VOUT = 2.5 V, VIN = 0.9 V, VEN = 0 V
VIN = 1 V, IL = 200 mA, TA = 25 °C
VIN = 1.2 V, IL = 200 mA, TA = 25 °C
VIN = 1.8 V, IL = 200 mA, TA = 25 °C
VIN = 2.5 V, IL = 200 mA, TA = 25 °C
VIN = 1 V
VIN = 2.5 V
VIN = 2.5 V, VEN = 0 V
VIN = 2.5 V, VEN = 2.5 V
Both, VIN = 1.2 V
Both, VIN = 2.5 V
Both, VIN = 1.2 V
Both, VIN = 2.5 V
SiP32452, VIN = 1.2 V
SiP32452, VIN = 2.5 V
RLOAD = 10 ,
CL = 0.1 µF
TA = 25 °C
SiP32453, VIN = 1.2 V
SiP32453, VIN = 2.5 V
Min.a
0.9
-
-
-
-
-
-
-
-
-
-
-
1.5
-
-
-
-
10
5
-
-
30
30
Limits
Typ.b
-
10
34
-
-
0.001
56
55
54
54
3900
-
-
-
10
0.4
0.05
20
9.8
0.25
0.15
98
86
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For VIN outside this range consult typical EN threshold curve.
Max.a
2.5
15
60
1
30
10
65
65
65
65
-
0.1
-
1
15
1
1
30
20
1
1
150
150
Unit
V
µA
m
ppm/°C
V
µA
µs
Document Number: 63315
www.vishay.com
S11-1695-Rev. B, 22-Aug-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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