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SIP32452DB-T2-GE1(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors

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SIP32452DB-T2-GE1
(Rev.:2011)
Vishay
Vishay Semiconductors Vishay
SIP32452DB-T2-GE1 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
SiP32452, SiP32453
Vishay Siliconix
PIN CONFIGURATION
Index-Bump A1 1
IN
2
OUT
A
W
B AB
2
OUT
1
IN
A
B
EN GND
Backside
GND EN
Bumpside
Figure 2 - MICRO FOOT® 2 x 2 Package
PIN DESCRIPTION
Pin Number Name
Function
A1
IN
This pin is the n-channel MOSFET drain connection. Bypass to ground through a 4.7 µF capacitor.
A2
OUT
This pin is the n-channel MOSFET source connection. Bypass to ground through a 0.1 µF capacitor.
B1
EN
Enable input
B2
GND
Ground connection
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
45
40
35
30
25
20
15
10
5
0
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
VIN (V)
Figure 3 - Quiescent Current vs. Input Voltage
50
45
VIN = 2.5 V
40
35
30
25
20
15
VIN = 1.2 V
10
5
0
- 40 - 20 0
VIN = 1 V
20 40 60
80 100
Temperature (°C)
Figure 4 - Quiescent Current vs. Temperature
12
10
8
6
4
2
0
0.8
1.2
1.6
2.0
2.4
2.8
VIN (V)
Figure 5 - Off Supply Current vs. Input Voltage
1000
100
10
VIN = 2.5 V
1
0.1
0.01
0.001
VIN = 1.2 V
VIN = 1 V
0.0001
- 40 - 20 0
20 40 60 80 100
Temperature (°C)
Figure 6 - Off Supply Current vs. Temperature
www.vishay.com
Document Number: 63315
4
S11-1695-Rev. B, 22-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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