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NE321000 데이터 시트보기 (PDF) - NEC => Renesas Technology

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NE321000 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TYPICAL CHARACTERISTICS (TA = +25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
200
150
100
50
0
50
100 150 200 250
Ambient Temperature TA (°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2 V
60
40
20
0
–2.0
–1.0
0
Gate to Source Voltage VGS (V)
NE321000
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
60
VGS = 0 V
40
–0.2 V
20
–0.4 V
–0.6 V
0
1.0
2.0
Drain to Source Voltage VDS (V)
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
20
MSG.
VDS = 2 V
ID = 10 mA
16
12
|S21S|2
8
4
1
2
4 6 8 10 14 20 30
Frequency f (GHz)
Data Sheet P14270EJ2V0DS00
3

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