NE321000 데이터 시트보기 (PDF) - NEC => Renesas Technology

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NE321000

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

NEC => Renesas Technology 

CHIP DIMENSIONS (Unit: µm)

38

56

27

58

Drain

NE321000

Gate

61

56

38

26

300

Thickness = 140 µm

: BONDING AREA

Data Sheet P14270EJ2V0DS00

7

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