NE321000 데이터 시트보기 (PDF) - NEC => Renesas Technology
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NE321000 Datasheet PDF : 12 Pages
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NE321000
CHIP HANDLING
DIE ATTACHMENT
Die attach operation can be accomplished with Au-Sn (within a 300 °C − 10 s) performs in a forming gas
environment.
Epoxy die attach is not recommend.
BONDING
Bonding wires should be minimum length, semi hard gold wire (3 to 8 % elongation) 20 microns in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be
kept to minimum.
As a general rule, the bonding operation should be kept within a 280 °C, 2 minutes for all bonding wires.
If longer periods are required, the temperature should be lowered.
PRECAUTION
The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection
only and does not preclude the necessity of a clean environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of
static discharge.
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with
shottky barrier gate.
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Data Sheet P14270EJ2V0DS00
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