M12G45 데이터 시트보기 (PDF) - Toshiba
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M12G45 Datasheet PDF : 5 Pages
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SM12G45,SM12J45,SM12G45A,SM12J45A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
I
SM12G45
II
SM12J45
III
Gate Trigger
IV
Voltage
I
SM12G45A
II
SM12J45A
III
IV
I
SM12G45
II
SM12J45
III
Gate Trigger
IV
Current
I
SM12G45A
II
SM12J45A
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of
Off−State Voltage at
Commutation
SM12G45
SM12J45
SM12G45A
SM12J45A
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
IDRM
VDRM=Rated, Tj = 125°C
―
―
T2 (+) , Gate (+) ―
―
2
mA
2
T2 (+) , Gate (−) ―
―
2
T2 (−) , Gate (−) ―
―
2
VGT
VD = 12V,
RL = 20Ω
T2 (−) , Gate (+) ―
―
―
V
T2 (+) , Gate (+) ―
―
1.5
T2 (+) , Gate (−) ―
―
1.5
T2 (−) , Gate (−) ―
―
1.5
T2 (−) , Gate (+) ―
―
―
T2 (+) , Gate (+) ―
―
30
T2 (+) , Gate (−) ―
―
30
T2 (−) , Gate (−) ―
―
30
IGT
VD = 12V,
RL = 20Ω
T2 (−) , Gate (+) ―
―
―
mA
T2 (+) , Gate (+) ―
―
20
T2 (+) , Gate (−) ―
―
20
T2 (−) , Gate (−) ―
―
20
T2 (−) , Gate (+) ―
―
―
VTM
VGD
IH
Rth (j−c)
ITM = 17A
VD = Rated, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Case, AC
―
―
1.5
V
0.2
―
―
V
―
―
50
mA
―
―
1.8 °C / W
(dv / dt) c
VDRM = 400V
(di / dt) c = − 6.5A / ms
10
―
―
V / µs
4
―
―
MARKING
NUMBER
*1
*2
TYPE
SYMBOL
SM12G45, SM12G45A
SM12J45, SM12J45A
SM12G45A, SM12J45A
MARK
M12G45
M12J45
A
Example
*3
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-13
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