CF5022A1A-2 데이터 시트보기 (PDF) - Nippon Precision Circuits
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CF5022A1A-2 Datasheet PDF : 11 Pages
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SM5022 series
Electrical Characteristics
3V operation: A×A series
VDD = 2.7 to 3.6V, VSS = 0V, Ta = − 20 to + 80°C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min typ max
HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 2.7V, IOH = 4mA
2.1
2.4
–
V
LOW-level output voltage
VOL Q: Measurement cct 2, VDD = 2.7V, IOL = 4mA
–
0.3
0.4
V
HIGH-level input voltage
VIH INHN
2.0
–
–
V
LOW-level input voltage
VIL INHN
–
–
0.5
V
Output leakage current
Q: Measurement cct 2, VDD = 3.6V, INHN = LOW, VOH = VDD
IZ
Q: Measurement cct 2, VDD = 3.6V, INHN = LOW, VOL = VSS
–
–
10
µA
–
–
10
Current consumption
I DD
30MHz crystal oscillator, measurement cct 3, load cct 1,
INHN = open, CL = 15pF
–
4
7
mA
INHN pull-up resistance
RUP Measurement cct 4
25
100 250
kΩ
Feedback resistance
Rf Measurement cct 5
200 600 1000 kΩ
Built-in capacitance
CG
SM5022A1AH, CF5022A1A 7.44
8
8.56
pF
Design value. A monitor pattern SM5022A3AH, CF5022A3A
CD on a wafer is tested.
SM5022A5AH, CF5022A5A 9.3
SM5022A7AH, CF5022A7A
10
10.7
pF
5V operation: A×A, B×A series
VDD = 4.5 to 5.5V, VSS = 0V, Ta = − 20 to + 80°C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min typ max
HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 8mA
3.9
4.2
–
V
LOW-level output voltage
VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 8mA
–
0.3
0.4
V
HIGH-level input voltage
VIH INHN
2.0
–
–
V
LOW-level input voltage
VIL INHN
–
–
0.8
V
Output leakage current
Q: Measurement cct 2, VDD = 5.5V, INHN = LOW, VOH = VDD
IZ
Q: Measurement cct 2, VDD = 5.5V, INHN = LOW, VOL = VSS
–
–
10
µA
–
–
10
Current consumption
30MHz crystal oscillator,
measurement cct 3, load cct 1, SM5022A×AH, CF5022A×A –
INHN = open, CL = 15pF
IDD
30MHz crystal oscillator,
measurement cct 3, load cct 2, SM5022B×AH, CF5022B×A –
INHN = open, CL = 15pF
7
12
mA
7
12
INHN pull-up resistance
RUP Measurement cct 4
25
100 250
kΩ
Feedback resistance
Rf Measurement cct 5
200 600 1000 kΩ
Built-in capacitance
CG
SM5022A1AH, CF5022A1A 7.44
8
8.56
pF
CD
Design value. A monitor pattern
on a wafer is tested.
SM5022A3AH, CF5022A3A
SM5022A5AH, CF5022A5A
SM5022A7AH, CF5022A7A
9.3
10
10.7
pF
SM5022B1AH, CF5022B1A
SEIKO NPC CORPORATION —5
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