NPN / PNP Silicon Switching Transistor Array
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN / PNP
transistor in one package
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
SMBT3904...PN
SMBT3904PN
SMBT3904UPN
C1
B2
E2
6
5
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07177
Type
SMBT3904PN
SMBT3904UPN
Marking
Pin Configuration
Package
s3P 1=E 2=B 3=C 4=E 5=B 6=C SOT363
s3P 1=E 2=B 3=C 4=E 5=B 6=C SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
TS ≤ 115 °C, SMBT3904PN
TS ≤ 105 °C, SMBT3904UPN
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
Value
Unit
40
V
40
6
200
mA
mW
250
330
150
°C
-65 ... 150
1
2012-08-21