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SMBT3904PN 데이터 시트보기 (PDF) - Infineon Technologies

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SMBT3904PN
Infineon
Infineon Technologies Infineon
SMBT3904PN Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SMBT3904...PN
Thermal Resistance
Parameter
Junction - soldering point1)
SMBT3904PN
SMBT3904UPN
Symbol
RthJS
Value
Unit
K/W
140
135
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 40
-
-V
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 40
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 6
-
-
Collector-base cutoff current
VCB = 30 V, IE = 0
DC current gain2)
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
ICBO
hFE
-
-
50 nA
-
40
-
-
70
-
-
100
-
300
60
-
-
30
-
-
Collector-emitter saturation voltage2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
Base emitter saturation voltage2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
V
-
- 0.25
-
-
0.4
VBEsat
0.65 - 0.85
-
- 0.95
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
2
2012-08-21

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