SMK0465FJ 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD

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SMK0465FJ

Advanced N-Ch Power MOSFET

Kodenshi Auk Co., LTD 

SMK0465FJ

Electrical Characteristics (TC=25C unless otherwise noted)

Characteristic

Symbol

Test Condition

Drain-source breakdown voltage

Gate threshold voltage

Drain-source cut-off current

Gate leakage current

Drain-source on-resistance

④

Forward transfer conductance ④

Input capacitance

Output capacitance

Reverse transfer capacitance

BVDSS

VGS(th)

IDSS

IGSS

RDS(ON)

gfs

Ciss

Coss

Crss

ID=250A, VGS=0

ID=250A, VDS=VGS

VDS=650V, VGS=0V

VDS=0V, VGS=30V

VGS=10V, ID=2.0A

VDS=10V, ID=2.0A

VGS=0V, VDS=25V,

f=1MHz

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VDD=300V, ID=4.0A

RG=25Ω

③④

VDS=520V, VGS=10V

ID=4.0A

③④

Min.

650

2.0

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Typ.

-

-

-

-

2.4

4.0

703

54.6

5.6

10

42

38

46

11.2

3.9

2.5

Max.

-

4.0

1

100

3.0

-

878

68.2

7.0

-

-

-

-

14.0

-

-

Unit

V

V

uA

nA



S

pF

ns

nC

Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min. Typ. Max.

Source current (DC)

Source current (Pulsed)

IS

Integral reverse diode

①

ISM

in the MOSFET

-

-

4

-

-

16

Forward voltage

④

VSD

VGS=0V, IS=4.0A

-

-

1.4

Reverse recovery time

Reverse recovery charge

trr

IS=4.0A, VGS=0V

Qrr

dIF/dt=100A/us

-

300

-

-

2.2

-

Unit

A

V

ns

uC

Note ;

① Repetitive rating : Pulse width limited by maximum junction temperature

② L=9.4mH, IAS=4.0A, VDD=50V, RG=25Ω, Starting TJ=25℃

③ Pulse Test : Pulse width≤300us, Duty cycle≤2%

④ Essentially independent of operating temperature

KSD-T0O065-000

2

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