UT62L5128 데이터 시트보기 (PDF) - Utron Technology Inc

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UT62L5128

512K X 8 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



Rev. 1.1

UTRON

UT62L5128

512K X 8 BIT LOW POWER CMOS SRAM

WRITE CYCLE 1 ( WE Controlled) (1,2,3,5)

Address

CE

tWC

tAW

tCW

tAS

tWP

tWR

WE

DOUT

tWHZ

High-Z

tOW

(4)

(4)

tDW

tDH

DIN

Data Valid

WRITE CYCLE 2 ( CE Controlled) (1,2,5)

tWC

Address

CE

WE

tAW

tAS

tCW

tWP

tWHZ

DOUT

(4)

DIN

tWR

High-Z

tDW

tDH

Data Valid

Notes :

1. WE or CE must be HIGH during all address transitions.

2. A write occurs during the overlap of a low CE and a low WE .

3. During a WE controlled with write cycle with OE LOW, tWP must be greater than tWHZ+tDW to allow the drivers to turn off and

data to be placed on the bus.

4. During this period, I/O pins are in the output state, and input singals must not be applied.

5. If the CE LOW transition occurs simultaneously with or after WE LOW transition, the outputs remain in a high

impedance state.

6. tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

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