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LA1135M 데이터 시트보기 (PDF) - SANYO -> Panasonic

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LA1135M Datasheet PDF : 18 Pages
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LA1135, 1135M
16. Measure against suppression of sensitivity in the presence of an undesired signal of high strength
(Sample application where two PIN diodes are used in the antenna damping circuit)
The LA1135 contains the wide-band AGC circuit (wide-band AGC with pin 2 input) against cross modulation which occurs
because an undesired signal of high strength distorts the FET input. The AGC = ON level depends on the value of external
resistor R3 as shown below.
Test conditions
Double-tuning
ANT input level
at which ANTD is turned ON when
fu = 1.4 MHz is inputed at fr = 1 MHz
Resistor value, R –
When a nonlinear element, such as transistor, is used for antenna damping, cross modulation which occurs when the transistor is
turned ON is as shown below.
Cross modulation characteristic which is caused
by the ANT Tr when the
LA1135 wide-band
AGC-ON level (with
pin 2 input) is varied
Double-
tuning
Cross Modulation Characteristics
Desired:1.0 MHz 400 Hz 30% mod 74 dBµ
Undesired: 1.4 MHz non-mod
Wide-band AGC (pin 2 input)75
Desired: 1.0 MHz 400 Hz
non-mod 74 dBµ
Undesired: 1.4 MHz 1 kHz
80% mod
Unit (resistence: , capacitance: F)
Cross modulation which occurs when the
transistor for ANT damping is turned ON
Undesired input – dBµ
The dynamic range of the FET input covers up to approximately 110 dBµ of antenna input, but the AGC-ON level must be set
lower because of the bad effect shown above.
Therefore, there are some cases where it is difficult to receive a desired signal of low strength in the presence of an an undesired
signal of high strength. To solve this problem, a sample application circuit where two PIN diodes with good linearity are used for
antenna damping and its cross modulation characteristic are shown below.
Sample Application Circuit where two PIN diodes are used for ANT damping
Equivalent capacitance available
(Capacitance is desirable because
of a slight change in ANT damping
in the band)
(Approximately 3000 pF)
Double-
tuning
Unit (resistance: , capacitance: F)
No. 1272-9/18

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