SPA06N60C3 데이터 시트보기 (PDF) - Infineon Technologies
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SPA06N60C3 Datasheet PDF : 11 Pages
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CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
• Extreme dv /dt rated
• Improved transconductance
• Fully isolated package (2500 V AC; 1 minute)
Product Summary
V DS @ T j,max
R DS(on),max
I
1)
D
SPA06N60C3
650 V
0.75 Ω
6.2 A
P-TO220-3-31
Type
SPA06N60C3
Package
Ordering Code Marking
PG-TO220-3-31 Q67040-S4631 06N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current1)
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1)
AR
Symbol Conditions
ID
T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS
I D=3.1 A, V DD=50 V
E AR
I D=6.2 A, V DD=50 V
I AR
Drain source voltage slope
dv /dt
I D=6.2 A, V DS=480 V,
T j=125 °C
Gate source voltage
Power dissipation
Operating and storage temperature
V GS
static
V GS
AC (f >1 Hz)
P tot
T C=25 °C
T j, T stg
Rev. 1.3
page 1
Value
6.2
3.9
18.6
200
0.5
6.2
50
±20
±30
32
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2010-12-21
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