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SPA06N60C3 데이터 시트보기 (PDF) - Infineon Technologies
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SPA06N60C3
CoolMOS Power Transistor
Infineon Technologies
SPA06N60C3 Datasheet PDF : 11 Pages
1
2
3
4
5
6
7
8
9
10
9 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=6.2 A pulsed
parameter:
V
DD
12
SPA06N60C3
10 Forward characteristics of reverse diode
I
F
=f(
V
SD
)
parameter:
T
j
10
2
10
25 °C
25 °C, 98%
V 120
V 480
8
10
1
150 °C, 98%
150 °C
6
4
10
0
2
0
0
10
20
Q
gate
[nC]
11 Avalanche SOA
I
AR
=f(
t
AR
)
parameter:
T
j(start)
8
10
-1
30
0
0.5
1
1.5
2
2.5
V
SD
[V]
12 Avalanche energy
E
AS
=f(
T
j
);
I
D
=3.1 A;
V
DD
=50 V
250
200
6
150
4
125 °C
25 °C
100
2
50
Rev. 1.3
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t
AR
[µs]
0
20
page 7
60
100
140
180
T
j
[°C]
2010-12-21
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