SPA11N60C2 데이터 시트보기 (PDF) - Infineon Technologies

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SPA11N60C2

Cool MOS Power Transistor

Infineon Technologies 

Final data

SPP11N60C2, SPB11N60C2

SPA11N60C2

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

Product Summary

VDS @ Tjmax 650 V

RDS(on)

0.38 Ω

ID

11 A

P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

Type

SPP11N60C2

SPB11N60C2

SPA11N60C2

3

12

P-TO220-3-31

Package

Ordering Code

P-TO220-3-1 Q67040-S4295

P-TO263-3-2 Q67040-S4298

P-TO220-3-31 Q67040-S4332

Marking

11N60C2

11N60C2

11N60C2

Maximum Ratings

Parameter

Continuous drain current

TC = 25 °C

TC = 100 °C

Pulsed drain current, tp limited by Tjmax

Avalanche energy, single pulse

ID=5.5A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=11A, VDD=50V

Avalanche current, repetitive tAR limited by Tjmax

Reverse diode dv/dt

IS = 11 A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C

Gate source voltage

Gate source voltage AC (f >1Hz)

Power dissipation, TC = 25°C

Operating and storage temperature

Page 1

Symbol

Value

SPP_B SPA

ID

11

111)

7

71)

ID puls

22

22

EAS

340

340

Unit

A

A

mJ

EAR

0.6

0.6

IAR

11

11 A

dv/dt

6

6 V/ns

VGS

VGS

Ptot

Tj , Tstg

±20

±20 V

±30

±30

125

33 W

-55...+150

°C

2002-08-12

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