SPA11N60C2 데이터 시트보기 (PDF) - Infineon Technologies
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SPA11N60C2 Datasheet PDF : 14 Pages
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Final data
SPP11N60C2, SPB11N60C2
SPA11N60C2
9 Typ. drain-source on resistance
RDS(on)=f(ID )
parameter: Tj=150°C, VGS
2
Ω
20V
1
12V
10V
9V
8V
7V
0.5
6V
0
0 2 4 6 8 10 12 14 A 18
ID
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
32
A
10 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
2.1 SPP11N60C2
Ω
1.8
1.6
1.4
1.2
1
0.8
0.6
98%
0.4
typ
0.2
0
-60 -20
20
60 100 °C
180
Tj
12 Typ. gate charge
VGS = f (QGate)
parameter: ID = 11 A pulsed
SPP11N60C2
16
V
24
20
25 °C
150 °C
16
12
0,2 VDS max
0,8 VDS max
10
8
12
6
8
4
4
2
0
0
4
8
12
V
20
VGS
0
0
10
20
30
40
50 nC 65
QGate
Page 7
2002-08-12
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