SPU02N60S5(2004) 데이터 시트보기 (PDF) - Infineon Technologies
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SPU02N60S5 Datasheet PDF : 10 Pages
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5 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
6
A
4
SPU02N60S5
SPD02N60S5
6 Typ. gate charge
VGS = f (QGate)
parameter: ID = 1.8 A pulsed
SPU02N60S5
16
V
0.2 VDS max
12 0.8 VDS max
10
3
8
6
2
4
1
2
0
0
4
8
12
VGS
20
V
0
0 1 2 3 4 5 6 7 8 nC 10
QGate
7 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 1 SPU02N60S5
A
10 0
8 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
2
A
1.6
1.4
1.2
Tj(START)=25°C
1
10 -1
10 -2
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
Rev. 2.1
Page 6
0.8 Tj(START)=125°C
0.6
0.4
0.2
0
10
-3
10 -2
10 -1
10 0
10 1
10 2
µs 10 4
tAR
2004-03-30
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