SSI1N60A 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SSI1N60A Datasheet PDF : 7 Pages
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SSW/I1N60A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
600 -- -- V VGS=0V,ID=250 µA
-- 0.74 -- V/ oC ID=250 µA See Fig 7
2.0 -- 4.0 V VDS=5V,ID=250 µA
-- -- 100 nA VGS=30V
-- -- -100
VGS=-30V
-- -- 25
VDS=600V
-- -- 250 µA VDS=480V,TC=125 oC
Static Drain-Source
On-State Resistance
-- -- 12 Ω VGS=10V,ID=0.5A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 0.83 -- Ω VDS=50V,ID=0.5A
O4
-- 145 190
--
20
24
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 7 9
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 10 30
-- 13 35
VDD=300V,ID=1A,
-- 28 65 ns RG=24 Ω
See Fig 13
-- 13 35
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain ( “Miller” ) Charge
-- 7.5 11
VDS=480V,VGS=10V,
-- 1.2
-- 4
--
--
nC
ID=1A
See Fig 6 & Fig 12
O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
O4 --
--
--
-- 1
-- 3
-- 1.2
190 --
0.44 --
Integral reverse pn-diode
A
in the MOSFET
V TJ=25 oC,IS=1A,VGS=0V
ns TJ=25 oC ,IF=1A
µC diF/dt=100A/ µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=80mH, IAS=1A, VDD=50V, RG=27Ω, Starting TJ =25 oC
O3 ISD <_ 1A, di/dt <_ 60A/ µs, VDD <_ BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_ 2%
O5 Essentially Independent of Operating Temperature
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